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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD684 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 300V(Min) *High DC Current Gain: hFE= 1500(Min.)@IC= 2A *Low Collector-Emitter Saturation Voltage: VCE(sat)= 2.0V(Max) @IC= 4A APPLICATIONS *Igniter applications. *High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w ww scs .i VALUE 600 300 5 6 1 UNIT .cn mi e V V V A A IC Collector Current-Continuous IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC 30 W TJ 150 Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD684 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 40mH 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA B 2.5 V A ICBO Collector Cutoff Current VCB= 600V; IE= 0 500 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 500 A hFE-1 DC Current Gain IC= 2A; VCE= 2V hFE-2 DC Current Gain COB Collector Output Capacitance Switching Times ton Turn-On Time ts Storage Time w w scs .i w IC= 4A; VCE= 2V VCB= 50V, IE= 0; ftest= 1MHz .cn mi e 1500 200 35 pF 1.0 s IC= 4A; IB1= -IB2= 40mA; RL= 25,VCC =100V 8.0 s tf Fall Time 5.0 s isc Websitewww.iscsemi.cn 2 |
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